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RURP640CC, RURP650CC, RURP660CC
April 1995
6A, 400V - 600V Ultrafast Dual Diodes
Package
JEDEC TO-220AB
o
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated * Planar Construction
ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE)
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are ultrafast dual diodes with soft recovery characteristics (tRR < 55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors.
PACKAGE AVAILABILITY PART NUMBER RURP640CC RURP650CC RURP660CC PACKAGE TO-220AB TO-220AB TO-220AB BRAND RURP640C RURP650C RURP660C
Symbol
K
A1
A2
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
Absolute Maximum Ratings
(per leg) TC = +25oC, Unless Otherwise Specified RURP640CC 400 400 400 6 12 60 50 10 -65 to +175 RURP650CC 500 500 500 6 12 60 50 10 -65 to +175 RURP660CC 600 600 600 6 12 60 50 10 -65 to +175 UNITS V V V A A A W mJ oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +155oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
4007
6-55
Specifications RURP640CC, RURP650CC, RURP660CC
Electrical Specifications (per leg)
TC = +25oC, Unless Otherwise Specified LIMITS RURP640CC SYMBOL VF TEST CONDITION IF = 6A, TC = +25oC
o
RURP650CC MAX 1.5 1.2 100 500 55 60 3 MIN TYP 28 16 150 25 MAX 1.5 1.2 100 500 55 60 3 MIN -
RURP660CC TYP 28 16 150 25 MAX 1.5 1.2 100 500 55 60 3 UNITS V V A A A A A A ns ns ns ns nC pF
oC/W
MIN -
TYP 28 16 150 25 -
IF = 6A, TC = +150 C IR VR = 400V, TC = VR = 500V, TC = VR = 600V, TC = IR +25oC +25oC +25oC
VR = 400V, TC = +150oC VR = 500V, TC = +150oC VR = 600V, TC = +150oC
tRR
IF = 1A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s
tA tB QRR CJ RJC DEFINITIONS
IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s VR = 10V, IF = 0A
VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle.
V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 Q1 +V1 0 t2 t1 R2 Q4 0.25 IRM t3 C1 0 -V2 R3 Q3 -V4 VRM R4 IRM VR LLOOP DUT 0
+V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 IF
dIF dt tA
tRR tB
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
6-56
RURP640CC, RURP650CC, RURP660CC Typical Performance Curves
30 IR , REVERSE CURRENT (A) 500 100 +175oC
IF , FORWARD CURRENT (A)
10
10 +100oC 1
+100oC +175 C 1
o
0.1 +25oC 0.01
+25oC
0.5
0.001 0 0.5 1 1.5 2 2.5 0 100 200 300 400 500 600 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE
TC = +25oC, dIF/dt = 200A/s 50
90 75 t, RECOVERY TIMES (ns)
TC = +100oC, dIF/dt = 200A/s
t, RECOVERY TIMES (ns)
40 tRR
60 45 30
30
tRR
20
tA
tA tB
10
tB
15 0 0.5
0 0.5
1 IF , FORWARD CURRENT (A)
6
1 IF , FORWARD CURRENT (A)
6
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC
100
IF(AV) , AVERAGE FORWARD CURRENT (A)
TC = +175oC, dIF/dt = 200A/s
6 5 DC 4 SQ. WAVE 3 2
t, RECOVERY TIMES (ns)
80 tRR 60
40
tA tB
20
1 0 145
0 0.5
1 IF , FORWARD CURRENT (A)
6
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
6-57
RURP640CC, RURP650CC, RURP660CC Typical Performance Curves (Continued)
75 CJ , JUNCTION CAPACITANCE (pF)
60
45
30
15
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1
L
R
+ VDD
130
1M DUT VAVL
12V
Q2
130
CURRENT SENSE VDD
IL IV
IL
12V t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
6-58

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